Diamond-hexagonal semiconductor nanocones with controllable apex angle.
نویسندگان
چکیده
We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.
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ورودعنوان ژورنال:
- Journal of the American Chemical Society
دوره 127 40 شماره
صفحات -
تاریخ انتشار 2005